IS61LV12824-8TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-8TQ Datasheet - Page 6
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IS61LV12824-8TQ
Manufacturer Part Number
IS61LV12824-8TQ
Description
IC SRAM 3MBIT 8NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV12824-10TQLI-TR.pdf
(13 pages)
Specifications of IS61LV12824-8TQ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
3M (128K x 24)
Speed
8ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LV12824-8TQ
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61LV12824-8TQ-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LV12824
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
6
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
RC
OHA
DOE
HZOE
LZOE
HZCE
LZCE
AA
ACE
ACE
HZCE
LZCE
2
(2)
(2)
2
(2)
(2)
2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE1, CE2 Access Time
CE2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE1, CE2 to High-Z Output
CE2 to High-Z Output
CE, CE2 to Low-Z Output
CE2 to Low-Z Output
Min. Max.
—
—
8
3
8
0
0
0
3
-8
—
—
—
—
—
8
4
3
4
(1)
(Over Operating Range)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Min.
10
—
—
—
3
0
0
0
3
-10
Max.
—
10
—
10
—
—
4
3
5
Unit
ISSI
ns
ns
ns
ns
ns
ns
ns
ns
ns
06/22/05
Rev. D
®