IS61LV12824-8TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-8TQ Datasheet - Page 10
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IS61LV12824-8TQ
Manufacturer Part Number
IS61LV12824-8TQ
Description
IC SRAM 3MBIT 8NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV12824-10TQLI-TR.pdf
(13 pages)
Specifications of IS61LV12824-8TQ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
3M (128K x 24)
Speed
8ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LV12824-8TQ
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61LV12824-8TQ-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LV12824
10
WRITE CYCLE NO. 3
ADDRESS
Note:
1. The internal Write time is defined by the overlap of CE1 and CE2 = LOW, CE2 = HIGH and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The Data Input Setup and Hold timing is
referenced to the rising or falling edge of the signal that terminates the Write.
D
CE1
CE2
OUT
WE
D
OE
IN
LOW
LOW
HIGH
t
DATA UNDEFINED
SA
(1)
(WE Controlled: OE
t
t
I S
AW
HZWE
LOW
VALID ADDRESS
DURING
t
t
PWE2
WC
Integrated Silicon Solution, Inc. — 1-800-379-4774
W
HIGH-Z
RITE
t
C
SD
YLE
DATA
)
IN
VALID
t
HD
t
LZWE
t
HA
ISSI
CE2_WR3.eps
06/22/05
Rev. D
®