MMBZ9V1ALT3G ON Semiconductor, MMBZ9V1ALT3G Datasheet - Page 7

• Manufacturer Part Number: MMBZ9V1ALT3G
• Description: TVS Diode Arrays 9.1V 225mW Dual Common Anode
• Manufacturer: ON Semiconductor
• Series: MMBZxxxALT1r

Specifications of MMBZ9V1ALT3G

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 8.65 V
• Clamping Voltage: 14 V
• Operating Voltage: 6 V
• Peak Surge Current: 1.7 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Package / Case: SOT-23-3
• Peak Pulse Power Dissipation: 24 W
• Factory Pack Quantity: 10000

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT
USA/Canada
Phone: [phone]
Phone: 81−3−5817−1050
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
q
0.25
c
7
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
STYLE 12:
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
PROTRUSIONS, OR GATE BURRS.
0.079
DIM
A1
H
L1
PIN 1. CATHODE
A
D
b
c
E
e
L
q
2.0
E
inches
mm
2. CATHODE
3. ANODE
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
0

MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10

0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
0

MMBZ5V6ALT1/D
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
−−−
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX
10
