MMBZ9V1ALT3G ON Semiconductor, MMBZ9V1ALT3G Datasheet - Page 4

• Manufacturer Part Number: MMBZ9V1ALT3G
• Description: TVS Diode Arrays 9.1V 225mW Dual Common Anode
• Manufacturer: ON Semiconductor
• Series: MMBZxxxALT1r

Specifications of MMBZ9V1ALT3G

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 8.65 V
• Clamping Voltage: 14 V
• Operating Voltage: 6 V
• Peak Surge Current: 1.7 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Package / Case: SOT-23-3
• Peak Pulse Power Dissipation: 24 W
• Factory Pack Quantity: 10000

320
280
240
200
160
120
80
40
0
18
15
12
Figure 3. Typical Capacitance versus Bias Voltage
9
6
3
0
0
−40
(Upper curve for each voltage is unidirectional mode,
(Upper curve for each voltage is bidirectional mode,
5.6 V
Figure 1. Typical Breakdown Voltage
lower curve is bidirectional mode)
lower curve is unidirectional mode)
0
15 V
versus Temperature
1
TEMPERATURE (C)
BIAS (V)
300
250
200
150
100
50
0
+ 50
0
Figure 5. Steady State Power Derating Curve
25
2
FR−5 BOARD
TYPICAL CHARACTERISTICS
+ 100
50
TEMPERATURE (C)
http://onsemi.com
ALUMINA SUBSTRATE
75
+ 150
3
100
4
1000
0.01
100
0.1
60
50
40
30
20
10
10
Figure 4. Typical Capacitance versus Bias Voltage
0
125
1
−40
0
(Upper curve for each voltage is unidirectional mode,
150
Figure 2. Typical Leakage Current
lower curve is bidirectional mode)
33 V
175
versus Temperature
+ 25
1
TEMPERATURE (C)
27 V
BIAS (V)
+ 85
2
+ 125
3