MMBZ9V1ALT3G ON Semiconductor, MMBZ9V1ALT3G Datasheet - Page 5

• Manufacturer Part Number: MMBZ9V1ALT3G
• Description: TVS Diode Arrays 9.1V 225mW Dual Common Anode
• Manufacturer: ON Semiconductor
• Series: MMBZxxxALT1r

Specifications of MMBZ9V1ALT3G

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 8.65 V
• Clamping Voltage: 14 V
• Operating Voltage: 6 V
• Peak Surge Current: 1.7 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Package / Case: SOT-23-3
• Peak Pulse Power Dissipation: 24 W
• Factory Pack Quantity: 10000

100
100
10
50
0
1
0
0.1
UNIDIRECTIONAL
Power is defined as V
the clamping voltage at I
Figure 8. Maximum Non−repetitive Surge
t
t
PEAK VALUE − I
r
P
 10 ms
1
Figure 6. Pulse Waveform
1
Power, P
PW, PULSE WIDTH (ms)
HALF VALUE −
2
PP
BIDIRECTIONAL
t, TIME (ms)
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
RSM
pk
Z
10
(pk).
versus PW
x I
3
WAVEFORM, T
Z
(pk) where V
PP
.
RECTANGULAR
I
PP
2
P
100
4
TYPICAL CHARACTERISTICS
) IS DEFINED
RSM
A
= 25C
is
http://onsemi.com
1000
5
100
100
10
90
80
70
60
50
40
30
20
10
1
0
0.1
0
UNIDIRECTIONAL
Power is defined as V
V
the low test current used for voltage classification.
Z
Figure 9. Maximum Non−repetitive Surge
(NOM) is the nominal Zener voltage measured at
25
Figure 7. Pulse Derating Curve
T
Power, P
A
50
, AMBIENT TEMPERATURE (C)
1
BIDIRECTIONAL
PW, PULSE WIDTH (ms)
75
pk
Z
(NOM) versus PW
(NOM) x I
100
10
WAVEFORM, T
125
RECTANGULAR
Z
(pk) where
100
150
A
= 25C
175
1000
200