IS42S16160D-75EBL-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-75EBL-TR Datasheet - Page 59

• Manufacturer Part Number: IS42S16160D-75EBL-TR
• Description: IC SDRAM 256MBIT 133MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16160D-75EBL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-BGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
WRITE - WITHOUT AUTO PRECHARGE
Notes:
1) Burst Length = 4
2) x16: A9, A11, and A12 = "Don't Care"
3) t
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
04/05/2010
A0-A9, A11, A12
x8: A11 and A12 = "Don't Care"
ras
DQM/DQML
COMMAND
must not be violated.
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
AS
AS
AS
BANK
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
RCD
RAS
RC
t
CK
DISABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
DS
COLUMN m
WRITE
D
BANK
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
DS
D
T4
NOP
IN
t
m+
DH
2
t
DS
D
T5
NOP
IN
m+
t
DH
t
3
DPL (3)
SINGLE BANK
ALL BANKS
PRECHARGE
BANK
T6
t
RP
T7
NOP
DON'T CARE
ACTIVE
T8
BANK
ROW
ROW
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