IS42S16160D-75EBL-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-75EBL-TR Datasheet - Page 38

• Manufacturer Part Number: IS42S16160D-75EBL-TR
• Description: IC SDRAM 256MBIT 133MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16160D-75EBL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-BGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
READ to PRECHARGE
38
COMMAND
COMMAND
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
BANK a,
READ
READ
T0
T0
BANK,
COL n
COL n
CAS Latency - 2
CAS Latency - 3
T1
T1
NOP
NOP
T2
T2
NOP
NOP
D
OUT
n
T3
T3
NOP
NOP
D
D
OUT
OUT
n+1
n
PRECHARGE
PRECHARGE
Integrated Silicon Solution, Inc. — www.issi.com
T4
(a or all)
T4
BANK,
BANK
COL b
D
D
OUT
OUT
n+2
n+1
T5
T5
NOP
D
NOP
D
OUT
OUT
n+3
n+2
t
RQL
t
t
t
RP
RP
RQL
ACTIVE
BANK a,
T6
T6
NOP
D
ROW
OUT
High-Z
n+3
DON'T CARE
ACTIVE
DON'T CARE
BANK a,
T7
T7
NOP
ROW
High-Z
04/05/2010
Rev. D