IS42S16160D-75EBL-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-75EBL-TR Datasheet - Page 36

• Manufacturer Part Number: IS42S16160D-75EBL-TR
• Description: IC SDRAM 256MBIT 133MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16160D-75EBL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-BGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
36
Notes:
1) CAS latency = 2, Burst Length = Full Page
2) x16: A9, A11, and A12 = "Don't Care"
3) x8: Each row has 1,024 locations.
READ - FULL-PAGE BURST
A0-A9, A11, A12
DQML, DQMH
x8: A11 and A12 = "Don't Care"
COMMAND
BA0, BA1
DQM/
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
ACTIVE
AS
AS
AS
BANK
ROW
ROW
T0
t
t
CKH
CMH
t
t
t
AH
AH
AH
t
CK
t
RCD
T1
NOP
t
t
CMS
CL
COLUMN m
BANK
READ
T2
t
CMH
t
CH
(2)
CAS Latency
NOP
T3
t
LZ
t
AC
NOP
T4
D
OUT
t
OH
each row (x16) has
m
512 locations
t
AC
NOP
T5
D
OUT
Integrated Silicon Solution, Inc. — www.issi.com
t
OH
m+
(3)
t
1
AC
Full page
completion
NOP
T6
D
OUT
t
t
OH
m+
AC
2
Full-page burst not self-terminating.
Use BURST TERMINATE command.
Tn+1
NOP
D
OUT
t
OH
m-
t
1
AC
BURST TERM
Tn+2
D
OUT
t
OH
m
t
AC
Tn+3
NOP
D
OUT
t
DON'T CARE
UNDEFINED
OH
m+
t
HZ
1
04/05/2010
Tn+4
NOP
Rev. D