PESD5V2S18U /T3 NXP Semiconductors, PESD5V2S18U /T3 Datasheet - Page 4

• Manufacturer Part Number: PESD5V2S18U /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V2S18Ur

Specifications of PESD5V2S18U /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 18 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5.2 V
• Peak Surge Current: 10 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 5.4(Max) mm W x 7.4(Max) mm L
• Package / Case: SOT-339
• Peak Pulse Power Dissipation: 100 W
• Factory Pack Quantity: 1000
• Part # Aliases: PESD5V2S18U,118

NXP Semiconductors
2003 Apr 28
handbook, halfpage
handbook, halfpage
ESD protection array
Fig.2
(pF)
f = 1 MHz; T
Fig.4
P ZSM
C d
(W)
110
100
10
10
90
80
70
60
50
40
10
10
3
2
0
−2
Maximum non-repetitive peak reverse
power as a function of pulse duration.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 °C
1
10
2
−1
3
1
4
t p (ms)
5
V R (V)
MHC487
MHC485
10
6
4
handbook, halfpage
handbook, halfpage
Fig.3
t
Fig.5
p
I ZSM
V CL
(A)
(V)
= 8/20 µs
10
11
10
10
9
8
7
10
1
2
3
−2
Maximum non-repetitive peak reverse
current as a function of pulse duration.
Clamping voltage as a function of peak
reverse pulse current; typical values.
4
5
10
−1
6
7
PESD5V2S18U
1
8
Product data sheet
t p (ms)
9
I PP (A)
MHC488
MHC486
10
10