PESD5V2S18U /T3 NXP Semiconductors, PESD5V2S18U /T3 Datasheet - Page 3

• Manufacturer Part Number: PESD5V2S18U /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V2S18Ur

Specifications of PESD5V2S18U /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 18 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5.2 V
• Peak Surge Current: 10 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 5.4(Max) mm W x 7.4(Max) mm L
• Package / Case: SOT-339
• Peak Pulse Power Dissipation: 100 W
• Factory Pack Quantity: 1000
• Part # Aliases: PESD5V2S18U,118

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to SOT339-1 standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
2003 Apr 28
R
V
I
V
V
r
C
amb
R
diff
SYMBOL
SYMBOL
RWM
CL
BR
ESD protection array
th j-a
d
= 25 °C unless otherwise specified.
thermal resistance from junction to
ambient
crest working reverse
voltage
reverse current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
PARAMETER
PARAMETER
V
I
I
I
I
I
V
ZSM
ZSM
Z
Z
Z
RWM
R
= 5 mA
= 1 mA
= 5 mA
= 0; f = 1 MHz; see Fig.4
= 3 A; t
= 10 A; t
= 5.2 V
one or more diodes loaded
CONDITIONS
p
p
= 8/20 µs; see Fig.5
= 8/20 µs; see Fig.5 −
3
CONDITIONS
−
−
−
6.4
−
−
−
MIN.
−
0.1
−
−
6.8
−
−
100
TYP.
PESD5V2S18U
VALUE
135
Product data sheet
5.2
1
8
12
7.2
40
8
−
MAX.
UNIT
K/W
V
µA
V
V
V
Ω
Ω
pF
UNIT