IS43R32800B-5B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B-TR Datasheet - Page 6

• Manufacturer Part Number: IS43R32800B-5B-TR
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R32800B-5B-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS43R32800B
6
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
COMMAND TRUTH TABLE
Single Bank Precharge
Column Address Entry
Column Addres s Entry
Column Address E ntry
Column Address E ntry
Row Address Entry &
NOTE:
1. Applies only to read bursts with autoprecharge disabled; this command is undefi ned (and should not be used) for
2. BA 0-BA 1 select either the Baseor the Extended Mode Register (BA 0 = 0, BA 1 = 0 selects Mode Register;BA0=1 ,
PrechargeAll Banks
Self-RefreshEntry
Self-RefreshExit
ModeRegisterSet
Auto-Precharge
read bursts wi th autoprecharge enabled, and for write bursts.
BA 1 = 0 selects Extended Mode Register; other combinations of BA 0-BA 1 are reserved; A 0-A11 provide the
op-code to be written to the selected Mode Register.
Burst Terminate
Auto-Prech arge
Bank Activate
No Operation
& Write with
Auto-Refresh
COMMAND
& Rea d with
Deselect
& Rea d
& Write
MNEMONIC
WRITEA
REFSX
RE ADA
DESEL
WRITE
PREA
READ
REFA
REFS
TE RM
ACT
NOP
PRE
MRS
CKE
n-1
H
H
H
H
H
H
H
H
H
H
L
L
H
H
H
CKE
H
H
X
X
H
H
H
H
H
H
H
H
L
H
H
n
/CS
H
L
L
L
L
L
L
L
L
L
L
H
L
L
L
/RAS
H
Integrated Silicon Solution, Inc. — www.issi.com
X
H
L
L
L
H
H
H
H
L
L
X
H
L
/CAS
X
H
H
H
L
L
L
H
L
L
L
L
X
H
H
/WE BA0,1
X
X
H
H
L
L
L
L
H
H
H
H
H
L
L
V
V
V
X
L
X
X
V
X
V
V
X
X
X
X
A8
/AP
X
X
H
X
X
V
L
L
H
L
H
X
X
X
L
A0-7,
A9-11
V
X
V
V
X
X
X
V
X
X
X
V
V
X
X
note
1
2
Rev. 00D
03/19/08