IS43R32800B-5B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B-TR Datasheet - Page 31

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IS43R32800B-5B-TR

Manufacturer Part Number
IS43R32800B-5B-TR
Description
IC DDR SDRAM 256MBIT 144BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R32800B-5B-TR

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
144-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
Read I nterru pted by Bu rs t Stop
is minimum 1 CL K. A T ER M command to output disable latency is equivalent to the /CA S L atency.
As a result, RE AD to TE RM interval determines valid data length to be output. The figure below
shows examples of B L=8.
Burst read operation can be interrupted by a burst stop command(TE RM). RE AD to TE RM interval
CL=2 .0
CL=2 .5
Command
Command
Command
Command
Command
Command
DQS
DQS
DQS
DQS
/CLK
DQS
DQS
CL K
DQ
DQ
DQ
DQ
DQ
DQ
RE AD
Read Int err upted by TER M ( BL =8)
RE AD
RE AD
RE AD
RE AD
RE AD
TE RM
TE RM
TE RM
TE RM
Q0
Q0
Q0
Q1
Q1
Q1
TE RM
Q0
Q0
TE RM
Q0
Q2
Q2
Q1
Q1
Q1
Q3
Q3
Q2
Q2
Q4
Q3
Q3
Q5
Q4
Q5
31

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