BC856BDW1T3 ON Semiconductor, BC856BDW1T3 Datasheet - Page 4

• Manufacturer Part Number: BC856BDW1T3
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 65V
• Manufacturer: ON Semiconductor

Specifications of BC856BDW1T3

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 100 mAdc
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 10000

-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
-0.4
-0.2
I
-10 mA
-0.02
-0.6
C
V
T
=
A
CE
-0.5 -1.0 -2.0
Figure 7. Normalized DC Current Gain
Figure 9. Collector Saturation Region
= 25C
= -10 V
-1.0
I
C
V
Figure 11. Capacitances
I
-0.1
, COLLECTOR CURRENT (mAdc)
C
R
, REVERSE VOLTAGE (VOLTS)
= -20 mA
-2.0
I
B
, BASE CURRENT (mA)
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
-5.0 -10
I
C
-4.0 -6.0
C
= -50 mA
ib
C
-1.0
ob
-20
T
-10
A
= 25C
T
I
C
I
A
C
= -200 mA
= 25C
-50 -100 -200
= -100 mA
-20 -30 -40
http://onsemi.com
-10
-20
4
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
400
300
200
100
150
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
-0.5
-0.1 -0.2
Figure 12. Current−Gain − Bandwidth Product
T
A
-0.2
Figure 8. “Saturation” and “On” Voltages
= 25C
-55C to +125C
Figure 10. Base−Emitter Temperature
-1.0
-0.5 -1.0 -2.0
I
I
C
C
I
-2.0 -3.0
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
V
-1.0
V
V
BE(on)
CE(sat)
BE(sat)
Coefficient
@ V
@ I
@ I
-5.0
CE
C
C
/I
/I
B
= -10 V
B
= 10
-5.0
= 10
-10
-10
-10
-20
-20 -30
V
T
A
CE
= 25C
= -10 V
-50 -100
-100
-50