BC856BDW1T3 ON Semiconductor, BC856BDW1T3 Datasheet - Page 3

• Manufacturer Part Number: BC856BDW1T3
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 65V
• Manufacturer: ON Semiconductor

Specifications of BC856BDW1T3

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 100 mAdc
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 10000

-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.0
0.5
0.2
8.0
6.0
4.0
2.0
20
10
40
-0.1
0
-0.02
-0.1 -0.2
T
-10 mA
-0.2
J
I
V
T
C
= 25C
A
-0.05
CE
=
Figure 3. Collector Saturation Region
= 25C
= -5.0 V
-0.5
-0.1
-1.0
Figure 1. DC Current Gain
V
I
C
R
Figure 5. Capacitance
-2.0 -5.0
, COLLECTOR CURRENT (mA)
-20 mA
, REVERSE VOLTAGE (VOLTS)
-0.2
-1.0
I
B
, BASE CURRENT (mA)
SBC857BDW1T1G Series, BC858CDW1T1G Series
-2.0
-0.5
C
ib
-10
-50 mA
TYPICAL CHARACTERISTICS − BC856/SBC856
-5.0
-1.0
-20
C
ob
-2.0
-50 -100
-10
-100 mA
-20
T
-5.0
J
-200
= 25C
-200 mA
-50
-10
http://onsemi.com
-100
-20
3
-1.0
-0.8
-0.6
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-0.4
-0.2
500
200
100
50
20
0
-0.2
-0.2
Figure 4. Base−Emitter Temperature Coefficient
Figure 6. Current−Gain − Bandwidth Product
V
CE
T
-0.5
-0.5
J
q
= -5.0 V
V
= 25C
V
V
VB
BE
CE(sat)
BE(sat)
for V
@ V
-1.0
-1.0
-1.0
@ I
BE
CE
@ I
I
I
I
C
Figure 2. “On” Voltage
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
-2.0
C
= -5.0 V
-2.0
C
/I
/I
B
B
= 10
= 10
-5.0
-5.0
-10
-10
-10
-55C to 125C
-20
-20
-100
-50 -100
-50 -100
-200
-200