BC856BDW1T3 ON Semiconductor, BC856BDW1T3 Datasheet - Page 2

• Manufacturer Part Number: BC856BDW1T3
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 65V
• Manufacturer: ON Semiconductor

Specifications of BC856BDW1T3

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 100 mAdc
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 10000

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
CB
CB
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
CB
= −10 mA)
= −10 mA, V
= −10 mA)
= −1.0 mA)
= −10 mA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −10 mA, V
= −0.2 mA, V
= −30 V)
= −30 V, T
= −10 V, f = 1.0 MHz)
B
B
EB
CE
A
CE
CE
B
B
CE
CE
CE
= −0.5 mA)
= −0.5 mA)
= 150C)
= −5.0 mA)
= −5.0 mA)
= 0)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, f = 100 MHz)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, R
SBC857BDW1T1G Series, BC858CDW1T1G Series
Characteristic
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
BE(on)
C
CBO
h
NF
f
FE
T
ob
−5.0
−5.0
−5.0
−0.6
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
220
420
100
−
−
−
−
−
−
−
−
−
−
−
−0.7
−0.9
Typ
150
270
290
520
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.65
−0.75
−0.82
Max
−4.0
−0.3
−15
475
800
4.5
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
nA
mA
pF
dB
V
V
V
V
V
V
V
−