MPSA56\E6 Vishay Semiconductors, MPSA56\E6 Datasheet - Page 3

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MPSA56\E6

Manufacturer Part Number
MPSA56\E6
Description
Transistors Bipolar - BJT REORD 512-MPSA56
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of MPSA56\E6

Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 80 V
Collector- Emitter Voltage Vceo Max
- 80 V
Emitter- Base Voltage Vebo
4 V
Collector-emitter Saturation Voltage
- 80 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
50 MHz
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
- 0.5 A
Maximum Power Dissipation
625 mW
Factory Pack Quantity
20000
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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