MPSA56\E6 Vishay Semiconductors, MPSA56\E6 Datasheet

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MPSA56\E6

Manufacturer Part Number
MPSA56\E6
Description
Transistors Bipolar - BJT REORD 512-MPSA56
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of MPSA56\E6

Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 80 V
Collector- Emitter Voltage Vceo Max
- 80 V
Emitter- Base Voltage Vebo
4 V
Collector-emitter Saturation Voltage
- 80 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
50 MHz
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
- 0.5 A
Maximum Power Dissipation
625 mW
Factory Pack Quantity
20000
Document Number 88235
10-May-02
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Note:
(1) Valid provided that leads are kept at ambient temperature.
max.
0.022 (0.55)
0.181 (4.6)
0.098 (2.5)
TO-226AA (TO-92)
Bottom
View
0.142 (3.6)
Dimensions in inches
Small Signal Transistor (PNP)
and (millimeters)
T
T
A
C
= 25°C
= 25°C
New Product
Symbol
–V
–V
–V
R
P
–I
T
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
T
Features
• PNP Silicon Epitaxial Planar Transistor for
• As complementary type, the NPN transistor
• On special request, this transistor is also
• This transistor is also available in the SOT-23 case
CBO
CEO
EBO
tot
S
C
JA
j
switching and amplifier applications.
MPSA06 is recommended.
manufactured in the pin configuration TO-18.
with the type designation MMBTA56.
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Ratings at 25°C ambient temperature unless otherwise specified.
–55 to +150
Vishay Semiconductors
Value
200
formerly General Semiconductor
500
625
150
4.0
1.5
80
80
(1)
MPSA56
www.vishay.com
°C/W
Unit
mW
mA
W
V
V
V
C
C
1

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MPSA56\E6 Summary of contents

Page 1

... CEO –V EBO – 25° tot T = 25° MPSA56 Vishay Semiconductors formerly General Semiconductor Ratings at 25°C ambient temperature unless otherwise specified. Value 80 80 4.0 500 625 1.5 (1) 200 150 –55 to +150 Unit °C/W ...

Page 2

... MPSA56 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter DC Current Gain Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base-Emitter ON Voltage Collector-Emitter Cut-off Current Collector-Base Cut-off Current Gain-Bandwidth Product www.vishay.com 25°C unless otherwise noted) J Symbol Test Condition – –I ...

Page 3

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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