MPSA56\E6 Vishay Semiconductors, MPSA56\E6 Datasheet - Page 2

• Manufacturer Part Number: MPSA56\E6
• Description: Transistors Bipolar - BJT REORD 512-MPSA56
• Manufacturer: Vishay Semiconductors

Specifications of MPSA56\E6

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 80 V
• Emitter- Base Voltage Vebo: 4 V
• Collector-emitter Saturation Voltage: - 80 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 50 MHz
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Continuous Collector Current: - 0.5 A
• Maximum Power Dissipation: 625 mW
• Factory Pack Quantity: 20000

MPSA56
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Electrical Characteristics
Parameter
DC Current Gain
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Saturation Voltage
Base-Emitter ON Voltage
Collector-Emitter Cut-off Current
Collector-Base Cut-off Current
Gain-Bandwidth Product
(T
J
–V
–V
–V
= 25°C unless otherwise noted)
Symbol
–V
–I
–I
(BR)CEO
(BR)EBO
h
BE(on
CEsat
CBO
CES
f
FE
T
)
–I
–V
–V
–I
–V
C
–I
C
–V
CE
–I
CE =
= 100 mA, –I
–V
CE =
C
= 10 mA, –I
E
Test Condition
CE
= 1 mA, I
= 1 V, –I
CB
= 100 A, I
f = 100 MHz
1 V, –I
1 V, –I
= 60 V, –I
= 80 V, I
C
C
C
B
= 100 mA
B
B
= 100 mA
= 10 mA
= 0 mA
E
C
= 1 mA
B
= 10 mA
= 0
= 0
= 0
Min
100
100
4.0
80
50
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
Document Number 88235
Max
0.25
100
100
1.2
—
—
—
—
—
10-May-02
MHz
Unit
nA
nA
—
V
V
V
V