IS43R32800B-6B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-6B-TR Datasheet - Page 16

• Manufacturer Part Number: IS43R32800B-6B-TR
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R32800B-6B-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS43R32800B
16
AC TIMING REQUIREMENTS (Continued)
Output Load Condition
Sy mbol
tXSN R E xit Self R ef. to non-R ead command
tXSR D E xit Self R ef. to -Read command
tXPN R E xit Power down to command
tXPR D E xit Power down to -Readcomm and
tWTR
tRCD
tRRD
tDAL
tREF I
tRAS
tRFC
tWR
tRC
tRP
(
V
OUT
R ow Cycle time(operation)
W rite Recovery time
Row Active time
Auto Ref. to Active/Auto Ref. command period
Row to Column Delay
R ow Precharge time
A verage Periodic Refresh interval
Act to Act Delay time
Auto Prechargewrite recovery + precharge time
Internal Write to ReadComm and Delay
AC Ch aract e risticsPa rame ter
Zo=50
V
Ω
TT
=V
30pF
50
REF
Ω
V
RE F
tWR+tRP
Min.
200
55
70
15
10
15
75
40
15
2
1
1
-5
120,000
Max
15.6
DQS
tWR +tRP
Min.
200
42
60
72
18
18
12
15
75
Integrated Silicon Solution, Inc. — www.issi.com
1
1
1
-6
120,000
Max
15.6
tWR+tRP
DQ
Min.
200
OutputTi ming
Measurement
Reference Point
45
65
75
20
15
75
20
15
1
1
1
-75
120,000
Max
15.6
Unit
tCK
tCK
tCK
tCK
µs
ns
-
ns
ns
ns
ns
ns
ns
ns
ns
Notes
18
17
V
V
RE F
RE F
Rev. 00D
03/19/08