IS43R32800B-6B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-6B-TR Datasheet - Page 10

• Manufacturer Part Number: IS43R32800B-6B-TR
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R32800B-6B-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS43R32800B
10
FUNCTIONAL TRUTH TABLE (continued)
REFRESHING
Current State
ABBREVIATIONS :
H=Hi gh Level, L= Low L evel, X =Don't Care
BA =Bank A ddress, R A=Row A ddress, CA =Column Address, NOP =No Operation
NO TES :
1. Al l entries assume that CK E was Hi gh during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by B A, depending on the state of
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by B A.
5. ILLE GAL if any bank is not idle.
ILLE GA L = Device operation and/or data-integrity are not guaranteed.
REGISTER
SETTING
that bank.
MODE
/ CS /RAS /C AS /WE Address
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
X
L
L
L
L
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
L
L
L
L
L
L
X
X
X
H
X
H
H
H
L
H
H
L
L
L
L
L
BA
BA , C A, A8
BA , R A
BA , A 8
Op-C ode, Mode-
Add
BA , C A, A8
BA , R A
BA , A 8
BA
Op-C ode, M ode-
Add
X
X
X
X
X
X
ACT
ACT
Command
READ / WRI TE
PRE / PRE A
READ / WRI TE
PRE / PRE A
MR S
DES EL
NOP
REF A
DES EL
NOP
REF A
TERM
MRS
TERM
Integrated Silicon Solution, Inc. — www.issi.com
NO P (Idle after tRC )
NO P (Idle after tRC )
NO P (Row Active after tRSC )
NO P (Row Active after tRSC )
ILLEG AL
ILLEG AL
Action
ILLE GAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEG AL
ILLEGAL
ILLEGAL
ILLEGAL
Notes
Rev. 00D
03/19/08