IS42S32400E-6BL ISSI, Integrated Silicon Solution Inc, IS42S32400E-6BL Datasheet - Page 43

• Manufacturer Part Number: IS42S32400E-6BL
• Description: IC SDRAM 128MBIT 166MHZ 90FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32400E-6BL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-FBGA
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32400E
ALTERNATING BANK WRITE ACCESSES
Notes:
1) Burst Length = 4
2) x32: A8, A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 00C
08/01/08
DQM0 - DQM3
COMMAND
A0-A9, A11
BA0, BA1
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
AH
AH
AH
CMH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
DS
BANK 0
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
D
ROW
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
T5
IN
NOP
t
m+
DH
t
DPL
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
D
T6
IN
t
DH
b
(2)
t
DS
D
t
T7
RP
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
BANK 0
D
DON'T CARE
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
DPL
3
- BANK 0
- BANK 1
43