PESD15VS2UQ T/R NXP Semiconductors, PESD15VS2UQ T/R Datasheet - Page 7

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PESD15VS2UQ T/R

Manufacturer Part Number
PESD15VS2UQ T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Series
PESDxS2UQr
Datasheet

Specifications of PESD15VS2UQ T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
17.6 V
Clamping Voltage
40 V
Operating Voltage
15 V
Peak Surge Current
5 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-663
Peak Pulse Power Dissipation
150 W
Factory Pack Quantity
4000
Part # Aliases
PESD15VS2UQ,115
NXP Semiconductors
PESDXS2UQ_SER_4
Product data sheet
Fig 7.
(1) PESD3V3S2UQ; V
(2) PESD5V0S2UQ; V
I
PESD12VS2UQ; V
PESD15VS2UQ; V
PESD24VS2UQ; V
Relative variation of reverse leakage current as a function of junction temperature; typical values
R
is less than 15 nA at 150 °C for:
RWM
RWM
RWM
RWM
RWM
= 3.3 V
= 5 V
= 12 V
= 15 V
= 24 V
I
RM(25°C)
I
RM
10
10
−1
1
−100
−50
Rev. 04 — 26 January 2010
0
Double ESD protection diodes in SOT663 package
50
100
001aaa729
T
(1)
(2)
j
(°C)
PESDxS2UQ series
150
© NXP B.V. 2010. All rights reserved.
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