PESD15VS2UQ T/R NXP Semiconductors, PESD15VS2UQ T/R Datasheet - Page 4

• Manufacturer Part Number: PESD15VS2UQ T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UQr

Specifications of PESD15VS2UQ T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 17.6 V
• Clamping Voltage: 40 V
• Operating Voltage: 15 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-663
• Peak Pulse Power Dissipation: 150 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD15VS2UQ,115

NXP Semiconductors
6. Characteristics
PESDXS2UQ_SER_4
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
IEC 61000-4-5
8/20 μs pulse waveform according to
10
100 % I
Table 8.
T
Symbol
Per diode
V
I
V
RM
j
e
RWM
BR
= 25
−t
PP
20
; 8 μs
°
C unless otherwise specified.
50 % I
Parameter
reverse standoff
voltage
reverse leakage current
breakdown voltage
Characteristics
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
30
PP
; 20 μs
001aaa630
t (μs)
Rev. 04 — 26 January 2010
40
Conditions
V
V
V
V
V
I
R
RWM
RWM
RWM
RWM
RWM
Fig 2.
Double ESD protection diodes in SOT663 package
= 5 mA
= 3.3 V
= 5 V
= 12 V
= 15 V
= 24 V
100 %
90 %
10 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
PESDxS2UQ series
t
r
30 ns
= 0.7 ns to 1 ns
Min
-
-
-
-
-
-
-
-
-
-
5.2
6.4
14.7
17.6
26.5
60 ns
Typ
-
-
-
-
50
<1
<1
<1
15.0
18.0
27.0
-
0.55
5.6
6.8
© NXP B.V. 2010. All rights reserved.
Max
3.3
5
12
15
24
3
300
30
50
50
6.0
7.2
15.3
18.4
27.5
001aaa631
t
V
V
V
V
V
Unit
V
V
μA
nA
nA
nA
nA
V
V
V
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