BC848B /T3 NXP Semiconductors, BC848B /T3 Datasheet - Page 2

no-image

BC848B /T3

Manufacturer Part Number
BC848B /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC848B /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC848B,235
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BC848_SER_7
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
Type number
BC848B
BC848W
Type number
BC848B
BC848W
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
base
emitter
collector
Package
Name
-
SC-70
Rev. 07 — 17 November 2009
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Marking code
1K*
1M*
30 V, 100 mA NPN general-purpose transistors
[1]
Simplified outline
1
3
006aaa144
BC848 series
2
Symbol
© NXP B.V. 2009. All rights reserved.
1
sym021
Version
SOT23
SOT323
3
2
2 of 12

Related parts for BC848B /T3