BC857BV T/R NXP Semiconductors, BC857BV T/R Datasheet - Page 5

• Manufacturer Part Number: BC857BV T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BV T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BC857BV,115

NXP Semiconductors
Graphical information BC857BV
2001 Nov 07
handbook, halfpage
handbook, halfpage
PNP general purpose double transistor
V
(1) T
(2) T
(3) T
V CEsat
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
1000
−10
−10
−10
B
800
600
400
200
−10
= −5 V.
= 20.
−10
amb
amb
amb
amb
amb
amb
−10
0
4
3
2
Fig.2 DC current gain; typical values.
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
−2
Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1
−1
(1)
(2)
(3)
1
(1)
(2)
(3)
−10
10
−10
10
2
I C (mA)
2
I C (mA)
MHB975
MHB977
−10
10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
V
(1) T
(2) T
(3) T
Fig.3
(mV)
I
(1) T
(2) T
(3) T
Fig.5
C
−1200
−1000
CE
−1200
−1000
/I
−800
−600
−400
−200
−800
−600
−400
−200
B
= −5 V.
20.
−0
amb
amb
amb
amb
amb
amb
−10
−10
0
−2
= −55 °C.
= 25 °C.
= 150 °C.
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
−10
(1)
(2)
(3)
−1
−1
(1)
(2)
(3)
−1
−10
−10
−10
Product data sheet
−10
2
BC857BV
I C (mA)
I C (mA)
2
MHB976
MHB978
−10
−10
3
3