BC857BV T/R NXP Semiconductors, BC857BV T/R Datasheet

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BC857BV T/R

Manufacturer Part Number
BC857BV T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857BV T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.1 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BC857BV,115
Product data sheet
Supersedes data of 2001 Aug 10
DATA SHEET
BC857BV
PNP general purpose double
transistor
DISCRETE SEMICONDUCTORS
M3D744
2001 Nov 07

Related parts for BC857BV T/R

BC857BV T/R Summary of contents

Page 1

DATA SHEET BC857BV PNP general purpose double transistor Product data sheet Supersedes data of 2001 Aug 10 DISCRETE SEMICONDUCTORS M3D744 2001 Nov 07 ...

Page 2

... NXP Semiconductors PNP general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • ...

Page 3

... NXP Semiconductors PNP general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose double transistor CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per transistor I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V base-emitter voltage BE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance ...

Page 5

... NXP Semiconductors PNP general purpose double transistor Graphical information BC857BV 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 − − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain; typical values. ...

Page 6

... NXP Semiconductors PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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