BC848B T/R NXP Semiconductors, BC848B T/R Datasheet - Page 3

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BC848B T/R

Manufacturer Part Number
BC848B T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC848B T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC848B,215
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC848_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT23
SOT323
SOT23
SOT323
Rev. 07 — 17 November 2009
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
30 V, 100 mA NPN general-purpose transistors
amb
≤ 1 ms
≤ 1 ms
≤ 25 °C
[1]
[1]
-
-
Min
Min
-
-
-
-
-
-
-
-
-
−65
−65
BC848 series
Typ
-
-
Max
30
30
5
200
200
250
200
150
+150
+150
100
© NXP B.V. 2009. All rights reserved.
Max
500
625
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
Unit
K/W
K/W
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