BC850B /T3 NXP Semiconductors, BC850B /T3 Datasheet - Page 2
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BC850B /T3
Manufacturer Part Number
BC850B /T3
Description
Transistors Bipolar - BJT TRANS LOW NOISE TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BC849C_T3.pdf
(8 pages)
Specifications of BC850B /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC850B,235
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BC849B
BC849C
BC849B
BC849C
BC850B
BC850C
NUMBER
NPN general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE
MARKING
CODE
2B*
2C*
NAME
(1)
−
BC850B
BC850C
NUMBER
TYPE
plastic surface mounted package; 3 leads
MARKING
CODE
2G*
2F*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
PIN
Top view
1
2
3
1
base
emitter
collector
3
DESCRIPTION
2
BC849; BC850
MAM255
Product data sheet
1
VERSION
SOT23
3
2