BC850B /T3 NXP Semiconductors, BC850B /T3 Datasheet - Page 3
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BC850B /T3
Manufacturer Part Number
BC850B /T3
Description
Transistors Bipolar - BJT TRANS LOW NOISE TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BC849C_T3.pdf
(8 pages)
Specifications of BC850B /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC850B,235
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BC849
BC850
BC849
BC850
PARAMETER
PARAMETER
3
open emitter
open base
open collector
T
note 1
amb
CONDITIONS
CONDITIONS
≤ 25 °C; note 1
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BC849; BC850
30
50
30
45
5
100
200
200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT