BC807DS T/R NXP Semiconductors, BC807DS T/R Datasheet - Page 7

• Manufacturer Part Number: BC807DS T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC807DS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC807DS,115

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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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613514/02/pp7
Date of release: 2002 Nov 22
Document order number: 9397 750 10581