BC807DS,115 NXP Semiconductors, BC807DS,115 Datasheet

TRANSISTOR PNP 500MA 45V SOT457

BC807DS,115

Manufacturer Part Number
BC807DS,115
Description
TRANSISTOR PNP 500MA 45V SOT457
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC807DS,115

Package / Case
SC-74-6
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
370mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
- 1 A
Power Dissipation
370 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057318115
BC807DS T/R
BC807DS T/R
Product data sheet
Supersedes data of 2002 Aug 09
dbook, halfpage
DATA SHEET
BC807DS
PNP general purpose double
transistor
DISCRETE SEMICONDUCTORS
M3D302
2002 Nov 22

Related parts for BC807DS,115

BC807DS,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BC807DS PNP general purpose double transistor Product data sheet Supersedes data of 2002 Aug 09 DISCRETE SEMICONDUCTORS M3D302 2002 Nov 22 ...

Page 2

... NXP Semiconductors PNP general purpose double transistor FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-phase stepper motor drivers. ...

Page 3

... NXP Semiconductors PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-a ambient Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER ...

Page 4

... NXP Semiconductors PNP general purpose double transistor 600 handbook, halfpage h FE (1) 500 400 300 (2) 200 (3) 100 0 −1 −10 −1 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. −10 ...

Page 5

... NXP Semiconductors PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2002 Nov scale 3.1 1.7 3.0 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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