PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 7

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PBSS3515M T/R

Manufacturer Part Number
PBSS3515M T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515M T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
15 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
280 MHz
Dc Collector/base Gain Hfe Min
200 at 10 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-101
Continuous Collector Current
0.5 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PBSS3515M,315
NXP Semiconductors
PACKAGE OUTLINE
2003 Jul 22
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
15 V, 0.5 A
PNP low V
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
OUTLINE
VERSION
SOT883
0.50
0.46
A
(1)
max.
0.03
e
A
1
CEsat
b
0.20
0.12
2
1
b
IEC
(BISS) transistor
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
7
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PROJECTION
EUROPEAN
scale
0.5
PBSS3515M
Product data sheet
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883

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