PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS3515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 280 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS3515M,315

NXP Semiconductors
PACKAGE OUTLINE
2003 Jul 22
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
15 V, 0.5 A
PNP low V
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
OUTLINE
VERSION
SOT883
0.50
0.46
A
(1)
max.
0.03
e
A
1
CEsat
b
0.20
0.12
2
1
b
IEC
(BISS) transistor
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
7
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PROJECTION
EUROPEAN
scale
0.5
PBSS3515M
Product data sheet
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883