PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS3515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 280 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS3515M,315

NXP Semiconductors
2003 Jul 22
handbook, halfpage
15 V, 0.5 A
PNP low V
T
(1) I
(2) I
(3) I
(4) I
Fig.6
−1200
amb
(mA)
−800
−400
I C
= 25 °C.
B
B
B
B
0
= −7 mA.
= −6.3 mA.
= −5.6 mA.
= −4.9 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
−2
CEsat
(5) I
(6) I
(7) I
(8) I
−4
B
B
B
B
(BISS) transistor
= −4.2 mA.
= −3.5 mA.
= −2.8 mA.
= −2.1 mA.
(4)
−6
(3)
(2)
−8
(9) I
(10) I
(10)
V CE (V)
(1)
(5)
(6)
(7)
(8)
(9)
MLD666
B
B
= −1.4 mA.
= −0.7 mA.
−10
6
handbook, halfpage
R CEsat
I
(1) T
(2) T
(3) T
Fig.7
C
/I
(Ω)
B
10
10
10
= 20.
10
−10
−1
amb
amb
amb
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
−1
−10
(2)
PBSS3515M
−10
Product data sheet
(1)
(3)
2
I C (mA)
MLD670
−10
3