PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 6

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PBSS3515M T/R

Manufacturer Part Number
PBSS3515M T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515M T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
15 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
280 MHz
Dc Collector/base Gain Hfe Min
200 at 10 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-101
Continuous Collector Current
0.5 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PBSS3515M,315
NXP Semiconductors
2003 Jul 22
handbook, halfpage
15 V, 0.5 A
PNP low V
T
(1) I
(2) I
(3) I
(4) I
Fig.6
−1200
amb
(mA)
−800
−400
I C
= 25 °C.
B
B
B
B
0
= −7 mA.
= −6.3 mA.
= −5.6 mA.
= −4.9 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
−2
CEsat
(5) I
(6) I
(7) I
(8) I
−4
B
B
B
B
(BISS) transistor
= −4.2 mA.
= −3.5 mA.
= −2.8 mA.
= −2.1 mA.
(4)
−6
(3)
(2)
−8
(9) I
(10) I
(10)
V CE (V)
(1)
(5)
(6)
(7)
(8)
(9)
MLD666
B
B
= −1.4 mA.
= −0.7 mA.
−10
6
handbook, halfpage
R CEsat
I
(1) T
(2) T
(3) T
Fig.7
C
/I
(Ω)
B
10
10
10
= 20.
10
−10
−1
amb
amb
amb
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
−1
−10
(2)
PBSS3515M
−10
Product data sheet
(1)
(3)
2
I C (mA)
MLD670
−10
3

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