BC860B /T3 NXP Semiconductors, BC860B /T3 Datasheet - Page 5

• Manufacturer Part Number: BC860B /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BC860B /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC860B,235

NXP Semiconductors
2004 Jan 16
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC859B; BC860B.
BC859C; BC860C.
h FE
h FE
400
300
200
100
600
500
400
300
200
100
−10
−10
0
0
−2
−2
−10
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−1
5
−10
−10
V CE = −5 V
V CE = −5 V
−10
−10
2
2
BC859; BC860
I C (mA)
I C (mA)
Product data sheet
MBH727
MBH728
−10
−10
3
3