BC860B /T3 NXP Semiconductors, BC860B /T3 Datasheet - Page 2

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BC860B /T3

Manufacturer Part Number
BC860B /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC860B /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
220 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC860B,235
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BC859B
BC859C
BC859B
BC859C
BC860B
BC860C
NUMBER
PNP general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE
MARKING
CODE
4B*
4C*
NAME
(1)
BC860B
BC860C
NUMBER
TYPE
plastic surface mounted package; 3 leads
MARKING
CODE
4G*
4F*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BC859; BC860
MAM256
Product data sheet
1
VERSION
SOT23
3
2

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