BCW89 T/R NXP Semiconductors, BCW89 T/R Datasheet - Page 3

• Manufacturer Part Number: BCW89 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCW89 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 120 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCW89,215

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board
CHARACTERISTICS
T
1999 Apr 15
R
I
I
h
V
V
V
C
f
F
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
PNP general purpose transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= −10 μA; V
= −2 mA; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= −2 mA; V
= −10 mA; V
= −200 μA; V
e
.
= 0; V
CB
CB
EB
note 1
3
= −20 V
= −20 V; T
= −5 V
CONDITIONS
CB
CE
CE
B
B
B
B
CE
CE
= −10 V; f = 1 MHz
CE
= −0.5 mA
= −2.5 mA
= −0.5 mA
= −2.5 mA
= −5 V
= −5 V
CONDITIONS
= −5 V
= −5 V; f = 100 MHz −
= −5 V; R
j
= 100 °C
S
= 2 kΩ;
−
−
−
−
120
−
−
−
−
−600
−
−
MIN.
VALUE
500
−
−
−
90
−
−80
−150
−720
−810
−
4.5
150
−
TYP.
Product data sheet
−100
−10
−100
−
260
−300
−
−
−
−750
−
−
10
BCW89
MAX. UNIT
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB