BCW89 T/R NXP Semiconductors, BCW89 T/R Datasheet - Page 2

• Manufacturer Part Number: BCW89 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCW89 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 120 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCW89,215

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 15
BCW89
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
H3∗
(1)
open emitter
open base; I
open collector
T
amb
≤ 25 °C
2
PINNING
handbook, halfpage
CONDITIONS
C
Fig.1 Simplified outline (SOT23) and symbol.
= −2 mA
PIN
Top view
1
2
3
1
base
emitter
collector
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
MAM256
Product data sheet
−80
−60
−5
−100
−200
−200
250
+150
150
+150
MAX.
1
BCW89
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT