BCM857BS T/R NXP Semiconductors, BCM857BS T/R Datasheet - Page 13

• Manufacturer Part Number: BCM857BS T/R
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCM857BS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCM857BS,115

NXP Semiconductors
12. Revision history
Table 10.
BCM857BV_BS_DS_6
Product data sheet
Document ID
BCM857BV_BS_DS_6
Modifications:
BCM857BV_BS_DS_5
BCM857BS_DS_4
BCM857BS_DS_3
BCM857BS_2
BCM857BS_1
Revision history
Release date
20090828
20060627
20060216
20060130
20050411
20040914
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This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 12 “Package outline SOT363
Figure 14 “Reflow soldering footprint
Figure 15 “Reflow soldering footprint SOT363
Figure 16 “Wave soldering footprint SOT363
Figure 18 “Wave soldering footprint SOT457
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 06 — 28 August 2009
(SC-88)”: updated
SOT666”: updated
Change notice
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(SC-88)”: updated
(SC-74)”: updated
(SC-88)”: updated
PNP/PNP matched double transistors
BCM857BV/BS/DS
Supersedes
BCM857BV_BS_DS_5
BCM857BS_DS_4
BCM857BS_DS_3
BCM857BS_2
BCM857BS_1
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© NXP B.V. 2009. All rights reserved.
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