BCM857BS T/R NXP Semiconductors, BCM857BS T/R Datasheet - Page 12

no-image

BCM857BS T/R

Manufacturer Part Number
BCM857BS T/R
Description
Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCM857BS T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
175 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCM857BS,115
NXP Semiconductors
BCM857BV_BS_DS_6
Product data sheet
Fig 18. Wave soldering footprint SOT457 (SC-74)
5.05
Dimensions in mm
Rev. 06 — 28 August 2009
5.30
1.40
4.30
PNP/PNP matched double transistors
BCM857BV/BS/DS
0.45
1.45 4.45
msc423
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
occupied area
12 of 15

Related parts for BCM857BS T/R