2N4401 T/R NXP Semiconductors, 2N4401 T/R Datasheet - Page 7

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2N4401 T/R

Manufacturer Part Number
2N4401 T/R
Description
Transistors Bipolar - BJT NPN SW 600MA 40V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N4401 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Maximum Dc Collector Current
800 mA
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Continuous Collector Current
600 mA
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
630 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
2N4401,116
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
R75/04/pp
7
Date of release:
2004 Oct 28
Fax: +31 40 27 24825
Document order number:
9397 750 13546
SCA76

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