2N4401 T/R NXP Semiconductors, 2N4401 T/R Datasheet - Page 4

• Manufacturer Part Number: 2N4401 T/R
• Description: Transistors Bipolar - BJT NPN SW 600MA 40V
• Manufacturer: NXP Semiconductors

Specifications of 2N4401 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Maximum Dc Collector Current: 800 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Continuous Collector Current: 600 mA
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 630 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: 2N4401,116

Philips Semiconductors
2004 Oct 28
handbook, full pagewidth
NPN switching transistor
V
R1 = 68 ; R2 = 325 ; R
V
Oscilloscope: input impedance Z
i
BB
= 9.5 V; T = 500 s; t
h FE
300
200
100
= 3.5 V; V
0
10
1
CC
= 29.5 V.
p
B
10 s; t
= 325 ; R
i
= 50 .
r
oscilloscope
= t
f
C
= 160 .
1
3 ns.
V
I
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450
R1
R2
R
B
V
BB
4
10
R
C
V
CC
DUT
V
o
mlb826
(probe)
450
oscilloscope
10
2
V CE = 1 V
I C mA
Product specification
2N4401
MGD811
10
3