PBSS5350X /T3 NXP Semiconductors, PBSS5350X /T3 Datasheet - Page 6

• Manufacturer Part Number: PBSS5350X /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350X /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.1 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 3 A
• Maximum Power Dissipation: 1600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5350X,135

NXP Semiconductors
2004 Nov 04
50 V, 3 A
PNP low V
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
10
3
2
10
−5
−5
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
duty cycle =
1.00
0
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
CEsat
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
10
10
−4
−4
(BISS) transistor
10
10
−3
−3
10
10
−2
−2
2
2
.
.
10
10
6
−1
−1
1
1
10
10
10
10
2
2
PBSS5350X
Product data sheet
t
t
p
p
006aaa244
006aaa245
(s)
(s)
10
10
3
3