PBSS5350X /T3 NXP Semiconductors, PBSS5350X /T3 Datasheet - Page 10

• Manufacturer Part Number: PBSS5350X /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350X /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.1 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 3 A
• Maximum Power Dissipation: 1600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5350X,135

NXP Semiconductors
PACKAGE OUTLINE
2004 Nov 04
50 V, 3 A
PNP low V
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
b p1
0.48
0.35
CEsat
0.53
0.40
b p2
(BISS) transistor
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
10
2
3
1.5
e 1
L
B
A
E
p
4.25
3.75
H E
1.2
0.8
4 mm
L p
0.13
w
PROJECTION
EUROPEAN
c
H
E
PBSS5350X
Product data sheet
ISSUE DATE
04-08-03
06-03-16
SOT89