BCX17 /T3 NXP Semiconductors, BCX17 /T3 Datasheet - Page 2

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BCX17 /T3

Manufacturer Part Number
BCX17 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX17 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCX17,235
NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Saturated switching and driver applications e.g. for
• Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BCX17
BCX18
BCX17
BCX18
industrial service
PNP general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
MARKING CODE
plastic surface mounted package; 3 leads
T1*
T2*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BCX17; BCX18
MAM256
Product data sheet
1
VERSION
SOT23
3
2

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