BCX17 /T3 NXP Semiconductors, BCX17 /T3 Datasheet

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BCX17 /T3

Manufacturer Part Number
BCX17 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX17 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCX17,235
Product data sheet
Supersedes data of 1999 May 31
DATA SHEET
BCX17; BCX18
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BCX17 /T3

BCX17 /T3 Summary of contents

Page 1

... DATA SHEET BCX17; BCX18 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 31 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • Saturated switching and driver applications e.g. for industrial service • Thick and thin-film circuits. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCX19. ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCX17 BCX18 V collector-emitter voltage CEO BCX17 BCX18 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat V base-emitter voltage BE C collector capacitance c f transition frequency T Note decreases by approximately −2 mV/°C with increasing temperature. ...

Page 5

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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