BC817DPN T/R NXP Semiconductors, BC817DPN T/R Datasheet - Page 4

• Manufacturer Part Number: BC817DPN T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC817DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC817DPN,115

NXP Semiconductors
2002 Nov 22
handbook, halfpage
NPN/PNP general purpose transistor
TR1 (NPN) V
(1) T
(2) T
(3) T
Fig.2
h FE
500
400
300
200
100
amb
amb
amb
0
10
−1
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
CE
= 1 V.
1
(1)
(2)
(3)
10
10
2
I C (mA)
MBL747
10
3
4
handbook, halfpage
TR1 (NPN)
(1) I
(2) I
(3) I
(4) I
Fig.3
(mA)
1000
I C
800
600
400
200
B
B
B
B
0
= 15 mA.
= 13.5 mA.
= 12 mA.
= 10.5 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
2
(1) (2) (3) (4) (5)
(5) I
(6) I
(7) I
(8) I
B
B
B
B
4
= 9 mA.
= 7.5 mA.
= 6 mA.
= 4.5 mA.
6
(9) I
(10) I
BC817DPN
(10)
(6)
(7)
(8)
(9)
Product data sheet
8
B
B
V CE (V)
= 3 mA.
= 1.5 mA.
MBL748
10