BC817DPN,125 NXP Semiconductors, BC817DPN,125 Datasheet
BC817DPN,125
Specifications of BC817DPN,125
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BC817DPN,125 Summary of contents
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DATA SHEET dbook, halfpage BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 DISCRETE SEMICONDUCTORS M3D302 2002 Nov 22 ...
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... NXP Semiconductors NPN/PNP general purpose transistor FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Complementary driver • Half and full bridge driver. ...
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... NXP Semiconductors NPN/PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-a ambient Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified; for the PNP transistor with negative polarity ...
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... NXP Semiconductors NPN/PNP general purpose transistor 500 handbook, halfpage h FE (1) 400 300 (2) 200 (3) 100 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. 2002 Nov 22 MBL747 1000 ...
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... NXP Semiconductors NPN/PNP general purpose transistor 3 10 handbook, halfpage V CEsat (mV (1) (2) (3) 10 − TR1 (NPN 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Nov 22 MBL749 1200 handbook, halfpage ...
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... NXP Semiconductors NPN/PNP general purpose transistor 600 handbook, halfpage h FE (1) 500 400 300 (2) 200 (3) 100 0 −1 −10 −1 −10 = −1 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors NPN/PNP general purpose transistor −10 3 handbook, halfpage V CEsat (mV) −10 2 (1) (2) (3) −10 −1 −1 −10 −1 −10 TR2 (PNP 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. ...
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... NXP Semiconductors NPN/PNP general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2002 Nov scale 3.1 1.7 3.0 0.6 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...