BC817DPN T/R NXP Semiconductors, BC817DPN T/R Datasheet - Page 5

• Manufacturer Part Number: BC817DPN T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC817DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC817DPN,115

NXP Semiconductors
2002 Nov 22
handbook, halfpage
NPN/PNP general purpose transistor
V CEsat
TR1 (NPN) I
(1) T
(2) T
(3) T
Fig.4
(mV)
10
10
10
amb
amb
amb
10
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
/I
B
= 10.
1
10
(1)
(2)
(3)
10
2
I C (mA)
MBL749
10
3
5
handbook, halfpage
TR1 (NPN) V
(1) T
(2) T
(3) T
Fig.5
(mV)
V BE
1200
1000
800
600
400
200
amb
amb
amb
10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
CE
= 1 V.
1
10
(1)
(2)
(3)
BC817DPN
10
Product data sheet
2
I C (mA)
MBL750
10
3