BCX56-16 /T3 NXP Semiconductors, BCX56-16 /T3 Datasheet - Page 13

• Manufacturer Part Number: BCX56-16 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCX56-16 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 180 MHz
• Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Maximum Power Dissipation: 1250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCX56-16,135

NXP Semiconductors
BCP56_BCX56_BC56PA
Product data sheet
Fig 15. DC current gain as a function of collector
Fig 17. Base-emitter voltage as a function of collector
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
300
200
100
1.2
0.8
0.4
0.0
0
10
10
V
current; typical values
V
current; typical values
–4
–1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
10
1
–3
(1)
(2)
(3)
10
10
–2
(1)
(2)
(3)
10
10
–1
2
10
All information provided in this document is subject to legal disclaimers.
1
006aac691
006aac692
3
I
C
I
C
(mA)
(A)
10
Rev. 9 — 25 October 2011
10
4
Fig 16. Collector current as a function of
Fig 18. Collector-emitter saturation voltage as a
BCP56; BCX56; BC56PA
V
CEsat
(A)
(V)
I
10
10
(1) T
(2) T
(3) T
C
1.6
1.2
0.8
0.4
–1
–2
0
1
10
0
T
collector-emitter voltage; typical values
I
function of collector current; typical values
–1
C
amb
amb
amb
amb
/I
B
80 V, 1 A NPN medium power transistors
= 10
= 25 C
= 100 C
= 25 C
= 55 C
I
B
0.4
(mA) = 50
1
0.8
10
45
(1)
(2)
(3)
40
10
1.2
2
35
30
© NXP B.V. 2011. All rights reserved.
10
1.6
006aac693
006aaa084
3
V
I
C
CE
(mA)
(V)
25
20
15
10
5
10
2.0
4
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