PUMX2 T/R NXP Semiconductors, PUMX2 T/R Datasheet - Page 6
PUMX2 T/R
Manufacturer Part Number
PUMX2 T/R
Description
Transistors Bipolar - BJT DOUBLE NPN TRANSISTR
Manufacturer
NXP Semiconductors
Datasheet
1.PUMX2_TR.pdf
(8 pages)
Specifications of PUMX2 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
7 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
120 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.15 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PUMX2,115
NXP Semiconductors
11. Revision history
Table 9.
PUMX2_2
Product data sheet
Document ID
PUMX2_2
Modifications:
PUMX2_1
Revision history
Release date
20091117
20051110
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT363
Figure 2 “Reflow soldering footprint SOT363
Figure 3 “Wave soldering footprint SOT363
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 17 November 2009
(SC-88)”: updated
NPN/NPN general-purpose double transistors
(SC-88)”: updated
Change notice
-
-
(SC-88)”: updated
Supersedes
PUMX2_1
-
© NXP B.V. 2009. All rights reserved.
PUMX2
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